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03366nam a22005535i 4500 |
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978-3-319-69257-9 |
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DE-He213 |
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20171123064630.0 |
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cr nn 008mamaa |
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171123s2017 gw | s |||| 0|eng d |
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|a 9783319692579
|9 978-3-319-69257-9
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|a 10.1007/978-3-319-69257-9
|2 doi
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|d GrThAP
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|a QC610.9-611.8
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|a TJFD5
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|2 bisacsh
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|a 537.622
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|a de la Barrera, Sergio C.
|e author.
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|a Layered Two-Dimensional Heterostructures and Their Tunneling Characteristics
|h [electronic resource] /
|c by Sergio C. de la Barrera.
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|a Cham :
|b Springer International Publishing :
|b Imprint: Springer,
|c 2017.
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| 300 |
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|a XVII, 141 p. 55 illus., 48 illus. in color.
|b online resource.
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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|a text file
|b PDF
|2 rda
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|a Springer Theses, Recognizing Outstanding Ph.D. Research,
|x 2190-5053
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| 520 |
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|a This thesis demonstrates that layered heterostructures of two-dimensional crystals graphene, hexagonal boron nitride, and transition metal dichalcogenides provide new and interesting interlayer transport phenomena. Low-energy electron microscopy is employed to study the surface of atomically thin WSe2 prepared by metal-organic chemical vapor deposition on epitaxial graphene substrates, and a method for unambiguously measuring the number of atomic layers is presented. Using very low-energy electrons to probe the surface of similar heterostructures, a relationship between extracted work function differences from the layers and the nature of the electrical contact between them is revealed. An extension of this analysis is applied to surface studies of MoSe2 prepared by molecular beam epitaxy on epitaxial graphene. A large work function difference is measured between the MoSe2 and graphene, and a model is provided which suggests that this observation results from an exceptional defect density in the MoSe2 film. The thesis expounds a theory for computing tunneling currents between two-dimensional crystals separated by a thin insulating barrier; a few situations resulting in resonant tunneling and negative differential resistance are illustrated by computed examples, as well as observed characteristics, for monolayer and bilayer graphene tunneling junctions and transistors.
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| 650 |
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|a Physics.
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| 650 |
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|a Nanoscale science.
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| 650 |
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|a Nanoscience.
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| 650 |
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|a Nanostructures.
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| 650 |
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|a Semiconductors.
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| 650 |
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|a Surfaces (Physics).
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| 650 |
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|a Interfaces (Physical sciences).
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| 650 |
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|a Thin films.
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| 650 |
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|a Spectroscopy.
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| 650 |
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|a Microscopy.
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| 650 |
1 |
4 |
|a Physics.
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| 650 |
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4 |
|a Semiconductors.
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| 650 |
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4 |
|a Nanoscale Science and Technology.
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| 650 |
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4 |
|a Surface and Interface Science, Thin Films.
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| 650 |
2 |
4 |
|a Spectroscopy and Microscopy.
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| 710 |
2 |
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|a SpringerLink (Online service)
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0 |
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|t Springer eBooks
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| 776 |
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8 |
|i Printed edition:
|z 9783319692562
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| 830 |
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|a Springer Theses, Recognizing Outstanding Ph.D. Research,
|x 2190-5053
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| 856 |
4 |
0 |
|u http://dx.doi.org/10.1007/978-3-319-69257-9
|z Full Text via HEAL-Link
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| 912 |
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|a ZDB-2-PHA
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| 950 |
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|a Physics and Astronomy (Springer-11651)
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