Epitaxial Growth of III-Nitride Compounds Computational Approach /

• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Άλλοι συγγραφείς: Matsuoka, Takashi (Επιμελητής έκδοσης, http://id.loc.gov/vocabulary/relators/edt), Kangawa, Yoshihiro (Επιμελητής έκδοσης, http://id.loc.gov/vocabulary/relators/edt)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2018.
• Έκδοση: 1st ed. 2018.
• Σειρά: Springer Series in Materials Science, 269
• Θέματα: Optical materials.; Electronic materials.; Semiconductors.; Physics.; Materials-Surfaces.; Thin films.; Crystallography.; Optical and Electronic Materials.; Numerical and Computational Physics, Simulation.; Surfaces and Interfaces, Thin Films.; Crystallography and Scattering Methods.

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretic...

Πίνακας περιεχομένων:

• Introduction
• Computational Methods
• Fundamental Properties of III-Nitrides
• Growth Processes
• Novel Behaviour of Thin Films
• Summary.