Epitaxial Growth of III-Nitride Compounds Computational Approach /

• Corporate Author: SpringerLink (Online service)
• Other Authors: Matsuoka, Takashi (Editor, http://id.loc.gov/vocabulary/relators/edt), Kangawa, Yoshihiro (Editor, http://id.loc.gov/vocabulary/relators/edt)
• Format: Electronic eBook
• Language: English
• Published: Cham : Springer International Publishing : Imprint: Springer, 2018.
• Edition: 1st ed. 2018.
• Series: Springer Series in Materials Science, 269
• Subjects: Optical materials.; Electronic materials.; Semiconductors.; Physics.; Materials-Surfaces.; Thin films.; Crystallography.; Optical and Electronic Materials.; Numerical and Computational Physics, Simulation.; Surfaces and Interfaces, Thin Films.; Crystallography and Scattering Methods.

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretic...

Table of Contents:

• Introduction
• Computational Methods
• Fundamental Properties of III-Nitrides
• Growth Processes
• Novel Behaviour of Thin Films
• Summary.