Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficien...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Άλλοι συγγραφείς: Meneghesso, Gaudenzio (Επιμελητής έκδοσης, http://id.loc.gov/vocabulary/relators/edt), Meneghini, Matteo (Επιμελητής έκδοσης, http://id.loc.gov/vocabulary/relators/edt), Zanoni, Enrico (Επιμελητής έκδοσης, http://id.loc.gov/vocabulary/relators/edt)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2018.
Έκδοση:1st ed. 2018.
Σειρά:Integrated Circuits and Systems,
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
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245 1 0 |a Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion  |h [electronic resource] /  |c edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni. 
250 |a 1st ed. 2018. 
264 1 |a Cham :  |b Springer International Publishing :  |b Imprint: Springer,  |c 2018. 
300 |a XIII, 232 p. 183 illus., 165 illus. in color.  |b online resource. 
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490 1 |a Integrated Circuits and Systems,  |x 1558-9412 
505 0 |a Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers. 
520 |a This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies. 
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700 1 |a Zanoni, Enrico.  |e editor.  |4 edt  |4 http://id.loc.gov/vocabulary/relators/edt 
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