Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Άλλοι συγγραφείς: Meneghesso, Gaudenzio (Επιμελητής έκδοσης, http://id.loc.gov/vocabulary/relators/edt), Meneghini, Matteo (Επιμελητής έκδοσης, http://id.loc.gov/vocabulary/relators/edt), Zanoni, Enrico (Επιμελητής έκδοσης, http://id.loc.gov/vocabulary/relators/edt)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2018.
• Έκδοση: 1st ed. 2018.
• Σειρά: Integrated Circuits and Systems,
• Θέματα: Electronic circuits.; Optical materials.; Electronic materials.; Circuits and Systems.; Electronic Circuits and Devices.; Optical and Electronic Materials.

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficien...

Πίνακας περιεχομένων:

• Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics
• Chapter2: Lateral GaN HEMT structures
• Chapter3: Vertical GaN Transistors for Power Electronics
• Chapter4: Reliability of GaN-based Power devices
• Chapter5: Validating GaN robustness
• Chapter6: Impact of Parasitics on GaN Based Power Conversion
• Chapter7: GaN in AC/DC Power Converters
• Chapter8: GaN in Switched Mode Power Amplifiers.