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04049nam a2200565 4500 |
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978-3-319-97604-4 |
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DE-He213 |
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20191022082508.0 |
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cr nn 008mamaa |
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190131s2019 gw | s |||| 0|eng d |
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|a 9783319976044
|9 978-3-319-97604-4
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|a 10.1007/978-3-319-97604-4
|2 doi
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|a 537.622
|2 23
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|a The Physics of Semiconductor Devices
|h [electronic resource] :
|b Proceedings of IWPSD 2017 /
|c edited by R. K. Sharma, D.S. Rawal.
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| 250 |
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|a 1st ed. 2019.
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| 264 |
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1 |
|a Cham :
|b Springer International Publishing :
|b Imprint: Springer,
|c 2019.
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| 300 |
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|a LVII, 1299 p. 824 illus., 656 illus. in color.
|b online resource.
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| 336 |
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|a text
|b txt
|2 rdacontent
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| 337 |
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|a computer
|b c
|2 rdamedia
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| 338 |
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|a online resource
|b cr
|2 rdacarrier
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| 347 |
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|a text file
|b PDF
|2 rda
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| 490 |
1 |
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|a Springer Proceedings in Physics,
|x 0930-8989 ;
|v 215
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| 505 |
0 |
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|a Enhanced Photodetection in Visible Region in rGo/GaN Based Hybrid Photodetector -- ZigZag Phosphorene Nanoribbons Antidot â€" Electronic structure and Device Application -- Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs -- Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION -- Effects of chemical functionalization on single-walled carbon nanotubes by mild hydrogen peroxide for PV applications -- Effect of tip induced strain on nanoscale electrical properties of MoS2-Graphene heterojunctions -- Optimization of the concentration of molybdenum disulfide (MoS2) for formation of atomically thin layers -- Fabrication of 2D NEMS on flexible substrates for strain engineering in sensing applications -- Transition metal doped ZnS monolayer: The first principles insights -- Tuning Resonant Wavelength of Silicon Micro-ring Resonator with Graphene -- Diameter Dependent Band Gap Properties of Different Structures of Single-walled Carbon.-Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors.
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| 520 |
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|a This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
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| 650 |
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0 |
|a Semiconductors.
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| 650 |
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|a Optical materials.
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| 650 |
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|a Electronic materials.
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| 650 |
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|a Nanoscale science.
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| 650 |
|
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|a Nanoscience.
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| 650 |
|
0 |
|a Nanostructures.
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| 650 |
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|a Solid state physics.
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| 650 |
1 |
4 |
|a Semiconductors.
|0 http://scigraph.springernature.com/things/product-market-codes/P25150
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| 650 |
2 |
4 |
|a Optical and Electronic Materials.
|0 http://scigraph.springernature.com/things/product-market-codes/Z12000
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| 650 |
2 |
4 |
|a Nanoscale Science and Technology.
|0 http://scigraph.springernature.com/things/product-market-codes/P25140
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| 650 |
2 |
4 |
|a Solid State Physics.
|0 http://scigraph.springernature.com/things/product-market-codes/P25013
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| 700 |
1 |
|
|a Sharma, R. K.
|e editor.
|4 edt
|4 http://id.loc.gov/vocabulary/relators/edt
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| 700 |
1 |
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|a Rawal, D.S.
|e editor.
|4 edt
|4 http://id.loc.gov/vocabulary/relators/edt
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| 710 |
2 |
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|a SpringerLink (Online service)
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| 773 |
0 |
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|t Springer eBooks
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| 776 |
0 |
8 |
|i Printed edition:
|z 9783319976037
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| 776 |
0 |
8 |
|i Printed edition:
|z 9783319976051
|
| 830 |
|
0 |
|a Springer Proceedings in Physics,
|x 0930-8989 ;
|v 215
|
| 856 |
4 |
0 |
|u https://doi.org/10.1007/978-3-319-97604-4
|z Full Text via HEAL-Link
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| 912 |
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|a ZDB-2-PHA
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| 950 |
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|a Physics and Astronomy (Springer-11651)
|
