The Physics of Semiconductor Devices Proceedings of IWPSD 2017 /

• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Άλλοι συγγραφείς: Sharma, R. K. (Επιμελητής έκδοσης, http://id.loc.gov/vocabulary/relators/edt), Rawal, D.S (Επιμελητής έκδοσης, http://id.loc.gov/vocabulary/relators/edt)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2019.
• Έκδοση: 1st ed. 2019.
• Σειρά: Springer Proceedings in Physics, 215
• Θέματα: Semiconductors.; Optical materials.; Electronic materials.; Nanoscale science.; Nanoscience.; Nanostructures.; Solid state physics.; Optical and Electronic Materials.; Nanoscale Science and Technology.; Solid State Physics.

This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same s...

Πίνακας περιεχομένων:

• Enhanced Photodetection in Visible Region in rGo/GaN Based Hybrid Photodetector
• ZigZag Phosphorene Nanoribbons Antidot â€" Electronic structure and Device Application
• Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs
• Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION
• Effects of chemical functionalization on single-walled carbon nanotubes by mild hydrogen peroxide for PV applications
• Effect of tip induced strain on nanoscale electrical properties of MoS2-Graphene heterojunctions
• Optimization of the concentration of molybdenum disulfide (MoS2) for formation of atomically thin layers
• Fabrication of 2D NEMS on flexible substrates for strain engineering in sensing applications
• Transition metal doped ZnS monolayer: The first principles insights
• Tuning Resonant Wavelength of Silicon Micro-ring Resonator with Graphene
• Diameter Dependent Band Gap Properties of Different Structures of Single-walled Carbon.-Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors.