Silicon Quantum Integrated Circuits Silicon-Germanium Heterostructure Devices: Basics and Realisations /

• Κύριοι συγγραφείς: Kasper, Erich (Συγγραφέας), Paul, D.J (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg, 2005.
• Σειρά: NanoScience and Technology,
• Θέματα: Materials science.; Condensed matter.; Optics.; Optoelectronics.; Plasmons (Physics).; Electronics.; Microelectronics.; Electronic circuits.; Optical materials.; Electronic materials.; Nanotechnology.; Materials Science.; Optical and Electronic Materials.; Optics, Optoelectronics, Plasmonics and Optical Devices.; Circuits and Systems.; Condensed Matter Physics.; Electronics and Microelectronics, Instrumentation.
• Φυσική περιγραφή: XII, 364 p. online resource.
• ISBN: 9783540263821
• ISSN: 1434-4904

Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.