Silicon Quantum Integrated Circuits Silicon-Germanium Heterostructure Devices: Basics and Realisations /

• Main Authors: Kasper, Erich (Author), Paul, D.J (Author)
• Corporate Author: SpringerLink (Online service)
• Format: Electronic eBook
• Language: English
• Published: Berlin, Heidelberg : Springer Berlin Heidelberg, 2005.
• Series: NanoScience and Technology,
• Subjects: Materials science.; Condensed matter.; Optics.; Optoelectronics.; Plasmons (Physics).; Electronics.; Microelectronics.; Electronic circuits.; Optical materials.; Electronic materials.; Nanotechnology.; Materials Science.; Optical and Electronic Materials.; Optics, Optoelectronics, Plasmonics and Optical Devices.; Circuits and Systems.; Condensed Matter Physics.; Electronics and Microelectronics, Instrumentation.

Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mi...

Table of Contents:

• Material Science
• Resumé of Semiconductor Physics
• Realisation of Potential Barriers
• Electronic Device Principles
• Heterostructure Bipolar Transistors - HBTs
• Hetero Field Effect Transistors (HFETs)
• Tunneling Phenomena
• Optoelectronics
• Integration
• Outlook.