Lifetime Spectroscopy A Method of Defect Characterization in Silicon for Photovoltaic Applications /

Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. Th...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας: Rein, Stefan (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg, 2005.
Σειρά:Springer Series in Material Science, 85
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
LEADER 02773nam a22005055i 4500
001 978-3-540-27922-8
003 DE-He213
005 20151204160737.0
007 cr nn 008mamaa
008 100301s2005 gw | s |||| 0|eng d
020 |a 9783540279228  |9 978-3-540-27922-8 
024 7 |a 10.1007/3-540-27922-9  |2 doi 
040 |d GrThAP 
050 4 |a QC176-176.9 
072 7 |a PNFS  |2 bicssc 
072 7 |a SCI077000  |2 bisacsh 
082 0 4 |a 530.41  |2 23 
100 1 |a Rein, Stefan.  |e author. 
245 1 0 |a Lifetime Spectroscopy  |h [electronic resource] :  |b A Method of Defect Characterization in Silicon for Photovoltaic Applications /  |c by Stefan Rein. 
264 1 |a Berlin, Heidelberg :  |b Springer Berlin Heidelberg,  |c 2005. 
300 |a XXVI, 492 p.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
490 1 |a Springer Series in Material Science,  |x 0933-033X ;  |v 85 
505 0 |a Theory of carrier lifetime in silicon -- Lifetime measurement techniques -- Theory of lifetime spectroscopy -- Defect characterization on intentionally metal-contaminated silicon samples -- The metastable defect in boron-doped Czochralski silicon -- Summary and further work -- Zusammenfassung und Ausblick. 
520 |a Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy. 
650 0 |a Physics. 
650 0 |a Solid state physics. 
650 0 |a Spectroscopy. 
650 0 |a Microscopy. 
650 0 |a Optical materials. 
650 0 |a Electronic materials. 
650 1 4 |a Physics. 
650 2 4 |a Solid State Physics. 
650 2 4 |a Spectroscopy and Microscopy. 
650 2 4 |a Optical and Electronic Materials. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9783540253037 
830 0 |a Springer Series in Material Science,  |x 0933-033X ;  |v 85 
856 4 0 |u http://dx.doi.org/10.1007/3-540-27922-9  |z Full Text via HEAL-Link 
912 |a ZDB-2-PHA 
950 |a Physics and Astronomy (Springer-11651)