Lifetime Spectroscopy A Method of Defect Characterization in Silicon for Photovoltaic Applications /
Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. Th...
Κύριος συγγραφέας: | |
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Συγγραφή απο Οργανισμό/Αρχή: | |
Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
Γλώσσα: | English |
Έκδοση: |
Berlin, Heidelberg :
Springer Berlin Heidelberg,
2005.
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Σειρά: | Springer Series in Material Science,
85 |
Θέματα: | |
Διαθέσιμο Online: | Full Text via HEAL-Link |
Πίνακας περιεχομένων:
- Theory of carrier lifetime in silicon
- Lifetime measurement techniques
- Theory of lifetime spectroscopy
- Defect characterization on intentionally metal-contaminated silicon samples
- The metastable defect in boron-doped Czochralski silicon
- Summary and further work
- Zusammenfassung und Ausblick.