Lifetime Spectroscopy A Method of Defect Characterization in Silicon for Photovoltaic Applications /

• Κύριος συγγραφέας: Rein, Stefan (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg, 2005.
• Σειρά: Springer Series in Material Science, 85
• Θέματα: Physics.; Solid state physics.; Spectroscopy.; Microscopy.; Optical materials.; Electronic materials.; Solid State Physics.; Spectroscopy and Microscopy.; Optical and Electronic Materials.

Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. Th...

Πίνακας περιεχομένων:

• Theory of carrier lifetime in silicon
• Lifetime measurement techniques
• Theory of lifetime spectroscopy
• Defect characterization on intentionally metal-contaminated silicon samples
• The metastable defect in boron-doped Czochralski silicon
• Summary and further work
• Zusammenfassung und Ausblick.