Gettering Defects in Semiconductors

Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and y...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς: Perevoschikov, Victor A. (Συγγραφέας), Skoupov, Vladimir D. (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg, 2005.
Σειρά:Springer Series in Advanced Microelectronics, 19
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
LEADER 03352nam a22005055i 4500
001 978-3-540-29499-3
003 DE-He213
005 20151204180904.0
007 cr nn 008mamaa
008 100301s2005 gw | s |||| 0|eng d
020 |a 9783540294993  |9 978-3-540-29499-3 
024 7 |a 10.1007/3-540-29499-6  |2 doi 
040 |d GrThAP 
050 4 |a TA1750-1750.22 
072 7 |a TJFD  |2 bicssc 
072 7 |a TEC021000  |2 bisacsh 
072 7 |a TEC008080  |2 bisacsh 
082 0 4 |a 620.11295  |2 23 
082 0 4 |a 620.11297  |2 23 
100 1 |a Perevoschikov, Victor A.  |e author. 
245 1 0 |a Gettering Defects in Semiconductors  |h [electronic resource] /  |c by Victor A. Perevoschikov, Vladimir D. Skoupov. 
264 1 |a Berlin, Heidelberg :  |b Springer Berlin Heidelberg,  |c 2005. 
300 |a XVI, 388 p. 70 illus.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
490 1 |a Springer Series in Advanced Microelectronics,  |x 1437-0387 ;  |v 19 
505 0 |a Basic technological processes and defect formation in the components of device structures -- Effects of defects on electrophysical and functional parameters in semiconducting structures and devices -- Techniques for high-temperature gettering -- Physical foundations for low-temperature gettering techniques. 
520 |a Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading. 
650 0 |a Materials science. 
650 0 |a Chemical engineering. 
650 0 |a Optical materials. 
650 0 |a Electronic materials. 
650 1 4 |a Materials Science. 
650 2 4 |a Optical and Electronic Materials. 
650 2 4 |a Industrial Chemistry/Chemical Engineering. 
700 1 |a Skoupov, Vladimir D.  |e author. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9783540262442 
830 0 |a Springer Series in Advanced Microelectronics,  |x 1437-0387 ;  |v 19 
856 4 0 |u http://dx.doi.org/10.1007/3-540-29499-6  |z Full Text via HEAL-Link 
912 |a ZDB-2-CMS 
950 |a Chemistry and Materials Science (Springer-11644)