Physics of Ferroelectrics A Modern Perspective /

During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predict...

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Λεπτομέρειες βιβλιογραφικής εγγραφής
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Άλλοι συγγραφείς: Rabe, Karin M. (Επιμελητής έκδοσης), Ahn, Charles H. (Επιμελητής έκδοσης), Triscone, Jean-Marc (Επιμελητής έκδοσης)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg, 2007.
Σειρά:Topics in Applied Physics, 105
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
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245 1 0 |a Physics of Ferroelectrics  |h [electronic resource] :  |b A Modern Perspective /  |c edited by Karin M. Rabe, Charles H. Ahn, Jean-Marc Triscone. 
264 1 |a Berlin, Heidelberg :  |b Springer Berlin Heidelberg,  |c 2007. 
300 |a XII, 388 p. 123 illus., 36 illus. in color.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
490 1 |a Topics in Applied Physics,  |x 0303-4216 ;  |v 105 
505 0 |a Appendix B – Material–Substrate Combinations Tables -- Modern Physics of Ferroelectrics: Essential Background -- Theory of Polarization: A Modern Approach -- A Landau Primer for Ferroelectrics -- First-Principles Studies of Ferroelectric Oxides -- Analogies and Differences between Ferroelectrics and Ferromagnets -- Growth and Novel Applications of Epitaxial Oxide Thin Films -- Ferroelectric Size Effects -- Nanoscale Studies of Domain Walls in Epitaxial Ferroelectric Thin Films -- APPENDIX A – Landau Free-Energy Coefficients. 
520 |a During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods of single crystalline ferroelectric thin films and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory. A book for practicing scientists as well as graduate students. 
650 0 |a Materials science. 
650 0 |a Electronics. 
650 0 |a Microelectronics. 
650 0 |a Nanotechnology. 
650 0 |a Metals. 
650 0 |a Materials  |x Surfaces. 
650 0 |a Thin films. 
650 1 4 |a Materials Science. 
650 2 4 |a Metallic Materials. 
650 2 4 |a Electronics and Microelectronics, Instrumentation. 
650 2 4 |a Surfaces and Interfaces, Thin Films. 
650 2 4 |a Nanotechnology. 
700 1 |a Rabe, Karin M.  |e editor. 
700 1 |a Ahn, Charles H.  |e editor. 
700 1 |a Triscone, Jean-Marc.  |e editor. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9783540345909 
830 0 |a Topics in Applied Physics,  |x 0303-4216 ;  |v 105 
856 4 0 |u http://dx.doi.org/10.1007/978-3-540-34591-6  |z Full Text via HEAL-Link 
912 |a ZDB-2-PHA 
950 |a Physics and Astronomy (Springer-11651)