Lateral Aligment of Epitaxial Quantum Dots

• Κύριος συγγραφέας: Schmidt, Oliver (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg, 2007.
• Σειρά: Nano Science and Technolgy,
• Θέματα: Materials science.; Quantum optics.; Optics.; Optoelectronics.; Plasmons (Physics).; Engineering.; Electrical engineering.; Optical materials.; Electronic materials.; Nanotechnology.; Materials Science.; Optical and Electronic Materials.; Optics, Optoelectronics, Plasmonics and Optical Devices.; Quantum Optics.; Electrical Engineering.; Engineering, general.

 Accurate positioning of self-organized nanostructures on a substrate surface can be regarded as the Achilles’ heel of nanotechnology. This perception also applies to self-assembled semiconductor quantum dots. This book describes the full range of possible strategies to laterally align self-assembled quantum dots on a substrate surface, starting from pure self-ordering mechanisms and culminating with forced alignment by lithographic positioning. The text addresses both short- and long-range ordering phenomena and paves the way for the future high integration of single quantum dot devices on a single chip. Contributions by the best-known experts in this field ensure that all relevant quantum-dot heterostructures are elucidated from diverse relevant perspectives. 

 Lateral Self-Alignment -- Physical Mechanisms of Self-Organized Formation of Quantum Dots -- Routes Toward Lateral Self-Organization of Quantum Dots: the Model System SiGe on Si(001) -- Short-Range Lateral Ordering of GeSi Quantum Dots Due to Elastic Interactions -- Hierarchical Self-Assembly of Lateral Quantum-Dot Molecules Around Nanoholes -- Energetics and Kinetics of Self-Organized Structure Formation in Solution Growth – the SiGe/Si System -- Ge Quantum Dot Self-Alignment on Vicinal Substrates -- Lateral Arrangement of Ge Self-Assembled Quantum Dots on a Partially Relaxed SixGe1?x Buffer Layer -- Ordering of Wires and Self-Assembled Dots on Vicinal Si and GaAs (110) Cleavage Planes -- Stacking and Ordering in Self-Organized Quantum Dot Multilayer Structures -- Self-Organized Anisotropic Strain Engineering for Lateral Quantum Dot Ordering -- Towards Quantum Dot Crystals via Multilayer Stacking on Different Indexed Surfaces -- Forced Alignment -- One-, Two-, and Three-Dimensionally Ordered GeSi Islands Grown on Prepatterned Si (001) Substrates -- Ordered SiGe Island Arrays: Long Range Material Distribution and Possible Device Applications -- Nanoscale Lateral Control of Ge Quantum Dot Nucleation Sites on Si(001) Using Focused Ion Beam Implantation -- Ge Nanodroplets Self-Assembly on Focused Ion Beam Patterned Substrates -- Metallization and Oxidation Templating of Surfaces for Directed Island Assembly -- Site Control and Selective-Area Growth Techniques of In As Quantum Dots with High Density and High Uniformity -- In(Ga)As Quantum Dot Crystals on Patterned GaAs(001) Substrates -- Directed Arrangement of Ge Quantum Dots on Si Mesas by Selective Epitaxial Growth -- Directed Self-Assembly of Quantum Dots by Local-Chemical-Potential Control via Strain Engineering on Patterned Substrates -- Structural and Luminescence Properties of Ordered Ge Islands on Patterned Substrates -- Formation of Si and Ge Nanostructures at Given Positions by Using Surface Microscopy and Ultrathin SiO2 Film Technology -- Pyramidal Quantum Dots Grown by Organometallic Chemical Vapor Deposition on Patterned Substrates -- Large-Scale Integration of Quantum Dot Devices on MBE-Based Quantum Wire Networks -- GaAs and InGaAs Position-Controlled Quantum Dots Fabricated by Selective-Area Metalloorganic Vapor Phase Epitaxy -- Spatial InAs Quantum Dot Positioning in GaAs Microdisk and Posts.