Lateral Aligment of Epitaxial Quantum Dots
Accurate positioning of self-organized nanostructures on a substrate surface can be regarded as the Achilles’ heel of nanotechnology. This perception also applies to self-assembled semiconductor quantum dots. This book describes the full range of possible strategies to laterally align self-assembled...
Κύριος συγγραφέας: | |
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Συγγραφή απο Οργανισμό/Αρχή: | |
Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
Γλώσσα: | English |
Έκδοση: |
Berlin, Heidelberg :
Springer Berlin Heidelberg,
2007.
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Σειρά: | Nano Science and Technolgy,
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Θέματα: | |
Διαθέσιμο Online: | Full Text via HEAL-Link |
Πίνακας περιεχομένων:
- Lateral Self-Alignment
- Physical Mechanisms of Self-Organized Formation of Quantum Dots
- Routes Toward Lateral Self-Organization of Quantum Dots: the Model System SiGe on Si(001)
- Short-Range Lateral Ordering of GeSi Quantum Dots Due to Elastic Interactions
- Hierarchical Self-Assembly of Lateral Quantum-Dot Molecules Around Nanoholes
- Energetics and Kinetics of Self-Organized Structure Formation in Solution Growth – the SiGe/Si System
- Ge Quantum Dot Self-Alignment on Vicinal Substrates
- Lateral Arrangement of Ge Self-Assembled Quantum Dots on a Partially Relaxed SixGe1?x Buffer Layer
- Ordering of Wires and Self-Assembled Dots on Vicinal Si and GaAs (110) Cleavage Planes
- Stacking and Ordering in Self-Organized Quantum Dot Multilayer Structures
- Self-Organized Anisotropic Strain Engineering for Lateral Quantum Dot Ordering
- Towards Quantum Dot Crystals via Multilayer Stacking on Different Indexed Surfaces
- Forced Alignment
- One-, Two-, and Three-Dimensionally Ordered GeSi Islands Grown on Prepatterned Si (001) Substrates
- Ordered SiGe Island Arrays: Long Range Material Distribution and Possible Device Applications
- Nanoscale Lateral Control of Ge Quantum Dot Nucleation Sites on Si(001) Using Focused Ion Beam Implantation
- Ge Nanodroplets Self-Assembly on Focused Ion Beam Patterned Substrates
- Metallization and Oxidation Templating of Surfaces for Directed Island Assembly
- Site Control and Selective-Area Growth Techniques of In As Quantum Dots with High Density and High Uniformity
- In(Ga)As Quantum Dot Crystals on Patterned GaAs(001) Substrates
- Directed Arrangement of Ge Quantum Dots on Si Mesas by Selective Epitaxial Growth
- Directed Self-Assembly of Quantum Dots by Local-Chemical-Potential Control via Strain Engineering on Patterned Substrates
- Structural and Luminescence Properties of Ordered Ge Islands on Patterned Substrates
- Formation of Si and Ge Nanostructures at Given Positions by Using Surface Microscopy and Ultrathin SiO2 Film Technology
- Pyramidal Quantum Dots Grown by Organometallic Chemical Vapor Deposition on Patterned Substrates
- Large-Scale Integration of Quantum Dot Devices on MBE-Based Quantum Wire Networks
- GaAs and InGaAs Position-Controlled Quantum Dots Fabricated by Selective-Area Metalloorganic Vapor Phase Epitaxy
- Spatial InAs Quantum Dot Positioning in GaAs Microdisk and Posts.