Semiconductor Power Devices Physics, Characteristics, Reliability /

Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles o...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς: Lutz, Josef (Συγγραφέας), Schlangenotto, Heinrich (Συγγραφέας), Scheuermann, Uwe (Συγγραφέας), De Doncker, Rik (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2011.
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
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001 978-3-642-11125-9
003 DE-He213
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024 7 |a 10.1007/978-3-642-11125-9  |2 doi 
040 |d GrThAP 
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100 1 |a Lutz, Josef.  |e author. 
245 1 0 |a Semiconductor Power Devices  |h [electronic resource] :  |b Physics, Characteristics, Reliability /  |c by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker. 
264 1 |a Berlin, Heidelberg :  |b Springer Berlin Heidelberg :  |b Imprint: Springer,  |c 2011. 
300 |a XII, 536 p.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
505 0 |a Power Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn - Junctions -- Short introduction to power device technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device Induced Oscillations and Electromagnetic Disturbances -- Power Electronic Systems -- Appendix -- Index. 
520 |a Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends. 
650 0 |a Engineering. 
650 0 |a Condensed matter. 
650 0 |a Electronics. 
650 0 |a Microelectronics. 
650 0 |a Power electronics. 
650 1 4 |a Engineering. 
650 2 4 |a Electronics and Microelectronics, Instrumentation. 
650 2 4 |a Power Electronics, Electrical Machines and Networks. 
650 2 4 |a Condensed Matter Physics. 
700 1 |a Schlangenotto, Heinrich.  |e author. 
700 1 |a Scheuermann, Uwe.  |e author. 
700 1 |a De Doncker, Rik.  |e author. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9783642111242 
856 4 0 |u http://dx.doi.org/10.1007/978-3-642-11125-9  |z Full Text via HEAL-Link 
912 |a ZDB-2-ENG 
950 |a Engineering (Springer-11647)