Transport in Metal-Oxide-Semiconductor Structures Mobile Ions Effects on the Oxide Properties /

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας: Bentarzi, Hamid (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg, 2011.
Σειρά:Engineering Materials,
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
LEADER 02931nam a22005295i 4500
001 978-3-642-16304-3
003 DE-He213
005 20151204181000.0
007 cr nn 008mamaa
008 110112s2011 gw | s |||| 0|eng d
020 |a 9783642163043  |9 978-3-642-16304-3 
024 7 |a 10.1007/978-3-642-16304-3  |2 doi 
040 |d GrThAP 
050 4 |a TA1750-1750.22 
072 7 |a TJFD  |2 bicssc 
072 7 |a TEC021000  |2 bisacsh 
072 7 |a TEC008080  |2 bisacsh 
082 0 4 |a 620.11295  |2 23 
082 0 4 |a 620.11297  |2 23 
100 1 |a Bentarzi, Hamid.  |e author. 
245 1 0 |a Transport in Metal-Oxide-Semiconductor Structures  |h [electronic resource] :  |b Mobile Ions Effects on the Oxide Properties /  |c by Hamid Bentarzi. 
264 1 |a Berlin, Heidelberg :  |b Springer Berlin Heidelberg,  |c 2011. 
300 |a XIV, 106 p.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
490 1 |a Engineering Materials,  |x 1612-1317 
505 0 |a Introduction -- The MOS Structure -- The MOS Oxide and Its Defects -- Review of Transport Mechanism in Thin Oxides of MOS Devices -- Experimental Techniques -- Theoretical Approaches of Mobile Ions Density Distribution Determination -- Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide. 
520 |a This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures. 
650 0 |a Materials science. 
650 0 |a Solid state physics. 
650 0 |a Semiconductors. 
650 0 |a Optical materials. 
650 0 |a Electronic materials. 
650 1 4 |a Materials Science. 
650 2 4 |a Optical and Electronic Materials. 
650 2 4 |a Semiconductors. 
650 2 4 |a Characterization and Evaluation of Materials. 
650 2 4 |a Solid State Physics. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9783642163036 
830 0 |a Engineering Materials,  |x 1612-1317 
856 4 0 |u http://dx.doi.org/10.1007/978-3-642-16304-3  |z Full Text via HEAL-Link 
912 |a ZDB-2-CMS 
950 |a Chemistry and Materials Science (Springer-11644)