Transport in Metal-Oxide-Semiconductor Structures Mobile Ions Effects on the Oxide Properties /

• Κύριος συγγραφέας: Bentarzi, Hamid (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg, 2011.
• Σειρά: Engineering Materials,
• Θέματα: Materials science.; Solid state physics.; Semiconductors.; Optical materials.; Electronic materials.; Materials Science.; Optical and Electronic Materials.; Characterization and Evaluation of Materials.; Solid State Physics.

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A...

Πίνακας περιεχομένων:

• Introduction
• The MOS Structure
• The MOS Oxide and Its Defects
• Review of Transport Mechanism in Thin Oxides of MOS Devices
• Experimental Techniques
• Theoretical Approaches of Mobile Ions Density Distribution Determination
• Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide.