Fowler-Nordheim Field Emission Effects in Semiconductor Nanostructures /

• Κύριοι συγγραφείς: Bhattacharya, Sitangshu (Συγγραφέας), Ghatak, Kamakhya Prasad (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg, 2012.
• Σειρά: Springer Series in Solid-State Sciences, 170
• Θέματα: Physics.; Nanoscale science.; Nanoscience.; Nanostructures.; Semiconductors.; Microwaves.; Optical engineering.; Optical materials.; Electronic materials.; Nanotechnology.; Optical and Electronic Materials.; Nanoscale Science and Technology.; Microwaves, RF and Optical Engineering.

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3,...

Πίνακας περιεχομένων:

• PART–I: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM WIRES AND SUPERLATTICES OF NON-PARABOLIC MATERIALS
• Field emission from quantum wires of non-parabolic materials
• Field emission from quantum wire superlattices of non-parabolic materials
• Field emission from quantum confined materials under magnetic quantization
• Field emission from super lattices of non-parabolic materials under magnetic quantization
• PART–II: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM CONFINED OPTOELECTRONIC MATERIALS IN THE PRESENCE OF LIGHT WAVES
• Field emission from quantum confined materials in the presence of light waves
• PART – III: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM CONFINED OPTOELECTRONIC MATERIALS IN THE PRESENCE OF INTENCE ELECTRIC FIELD
• Field emission from quantum confined optoelectronic materials
• Applications and Brief Review of Experimental Results.