Photomodulated Optical Reflectance A Fundamental Study Aimed at Non-Destructive Carrier Profiling in Silicon /

One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it su...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας: Bogdanowicz, Janusz (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2012.
Σειρά:Springer Theses, Recognizing Outstanding Ph.D. Research,
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
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100 1 |a Bogdanowicz, Janusz.  |e author. 
245 1 0 |a Photomodulated Optical Reflectance  |h [electronic resource] :  |b A Fundamental Study Aimed at Non-Destructive Carrier Profiling in Silicon /  |c by Janusz Bogdanowicz. 
264 1 |a Berlin, Heidelberg :  |b Springer Berlin Heidelberg :  |b Imprint: Springer,  |c 2012. 
300 |a XXIV, 204 p.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
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490 1 |a Springer Theses, Recognizing Outstanding Ph.D. Research,  |x 2190-5053 
505 0 |a Theory of Perturbation of the Reflectance -- Theory of Perturbation of the Refractive Index -- Theory of Carrier and Heat Transport in Homogeneously Doped Silicon -- Extension of the Transport Theory to Ultra-Shallow Doped Silicon Layers -- Assessment of the Model -- Application of the Model to Carrier Profling. 
520 |a One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation. 
650 0 |a Physics. 
650 0 |a Semiconductors. 
650 1 4 |a Physics. 
650 2 4 |a Semiconductors. 
650 2 4 |a Applied and Technical Physics. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9783642301070 
830 0 |a Springer Theses, Recognizing Outstanding Ph.D. Research,  |x 2190-5053 
856 4 0 |u http://dx.doi.org/10.1007/978-3-642-30108-7  |z Full Text via HEAL-Link 
912 |a ZDB-2-PHA 
950 |a Physics and Astronomy (Springer-11651)