Energy Level Alignment and Electron Transport Through Metal/Organic Contacts From Interfaces to Molecular Electronics /

In recent years, ever more electronic devices have started to exploit the advantages of organic semiconductors. The work reported in this thesis focuses on analyzing theoretically the energy level alignment of different metal/organic interfaces, necessary to tailor devices with good performance. Tra...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας: Abad, Enrique (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2013.
Σειρά:Springer Theses, Recognizing Outstanding Ph.D. Research,
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
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100 1 |a Abad, Enrique.  |e author. 
245 1 0 |a Energy Level Alignment and Electron Transport Through Metal/Organic Contacts  |h [electronic resource] :  |b From Interfaces to Molecular Electronics /  |c by Enrique Abad. 
264 1 |a Berlin, Heidelberg :  |b Springer Berlin Heidelberg :  |b Imprint: Springer,  |c 2013. 
300 |a XVIII, 198 p.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
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490 1 |a Springer Theses, Recognizing Outstanding Ph.D. Research,  |x 2190-5053 
505 0 |a Theoretical Foundation -- Further Developments in IDIS Model -- The IDIS Model at the Molecular Limit -- Results for Various Interfaces: C60, Benzene, TTF, TCNQ and Pentacene Over Au(111). 
520 |a In recent years, ever more electronic devices have started to exploit the advantages of organic semiconductors. The work reported in this thesis focuses on analyzing theoretically the energy level alignment of different metal/organic interfaces, necessary to tailor devices with good performance. Traditional methods based on density functional theory (DFT), are not appropriate for analyzing them because they underestimate the organic energy gap and fail to correctly describe the van der Waals forces. Since the size of these systems prohibits the use of more accurate methods, corrections to those DFT drawbacks are desirable. In this work a combination of a standard DFT calculation with the inclusion of the charging energy (U) of the molecule, calculated from first principles, is presented. Regarding the dispersion forces, incorrect long range interaction is substituted by a van der Waals potential. With these corrections, the C60, benzene, pentacene, TTF and TCNQ/Au(111) interfaces are analyzed, both for single molecules and for a monolayer. The results validate the induced density of interface states model. 
650 0 |a Physics. 
650 0 |a Chemistry, Physical and theoretical. 
650 0 |a Surfaces (Physics). 
650 0 |a Interfaces (Physical sciences). 
650 0 |a Thin films. 
650 0 |a Optical materials. 
650 0 |a Electronic materials. 
650 0 |a Materials  |x Surfaces. 
650 1 4 |a Physics. 
650 2 4 |a Surface and Interface Science, Thin Films. 
650 2 4 |a Optical and Electronic Materials. 
650 2 4 |a Theoretical, Mathematical and Computational Physics. 
650 2 4 |a Theoretical and Computational Chemistry. 
650 2 4 |a Surfaces and Interfaces, Thin Films. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9783642309069 
830 0 |a Springer Theses, Recognizing Outstanding Ph.D. Research,  |x 2190-5053 
856 4 0 |u http://dx.doi.org/10.1007/978-3-642-30907-6  |z Full Text via HEAL-Link 
912 |a ZDB-2-PHA 
950 |a Physics and Astronomy (Springer-11651)