Field-effect Self-mixing Terahertz Detectors

• Κύριος συγγραφέας: Sun, Jiandong (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2016.
• Έκδοση: 1st ed. 2016.
• Σειρά: Springer Theses, Recognizing Outstanding Ph.D. Research,
• Θέματα: Engineering.; Solid state physics.; Semiconductors.; Microwaves.; Optical engineering.; Microwaves, RF and Optical Engineering.; Optics, Lasers, Photonics, Optical Devices.; Solid State Physics.

 A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications. 

 Introduction -- Field-Effect Self-Mixing Mechanism and Detector Model -- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT -- Realization of Resonant Plasmon Excitation and Detection -- Scanning Near-Field Probe for Antenna Characterization -- Applications -- Conclusions and Outlook.