Li, Z. (2016). The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices. Springer Berlin Heidelberg : Imprint: Springer.
Chicago Style (17th ed.) CitationLi, Zhiqiang. The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices. Berlin, Heidelberg: Springer Berlin Heidelberg : Imprint: Springer, 2016.
MLA (8th ed.) CitationLi, Zhiqiang. The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices. Springer Berlin Heidelberg : Imprint: Springer, 2016.
Warning: These citations may not always be 100% accurate.