The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

• Κύριος συγγραφέας: Li, Zhiqiang (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2016.
• Σειρά: Springer Theses, Recognizing Outstanding Ph.D. Research,
• Θέματα: Physics.; Solid state physics.; Nanoscale science.; Nanoscience.; Nanostructures.; Semiconductors.; Electronic circuits.; Electronic Circuits and Devices.; Nanoscale Science and Technology.; Solid State Physics.
• Φυσική περιγραφή: XIV, 59 p. 52 illus., 49 illus. in color. online resource.
• ISBN: 9783662496831
• ISSN: 2190-5053

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.