The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

• Main Author: Li, Zhiqiang (Author)
• Corporate Author: SpringerLink (Online service)
• Format: Electronic eBook
• Language: English
• Published: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2016.
• Series: Springer Theses, Recognizing Outstanding Ph.D. Research,
• Subjects: Physics.; Solid state physics.; Nanoscale science.; Nanoscience.; Nanostructures.; Semiconductors.; Electronic circuits.; Electronic Circuits and Devices.; Nanoscale Science and Technology.; Solid State Physics.

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky...

Table of Contents:

• Introduction
• Ge-based Schottky barrier height modulation technology
• Metal germanide technology
• Contact resistance of Ge-based devices
• Conclusions.