Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System

This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of re...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας: Samukawa, Seiji (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Tokyo : Springer Japan : Imprint: Springer, 2014.
Σειρά:SpringerBriefs in Applied Sciences and Technology,
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
LEADER 02882nam a22005415i 4500
001 978-4-431-54795-2
003 DE-He213
005 20151031031112.0
007 cr nn 008mamaa
008 140128s2014 ja | s |||| 0|eng d
020 |a 9784431547952  |9 978-4-431-54795-2 
024 7 |a 10.1007/978-4-431-54795-2  |2 doi 
040 |d GrThAP 
050 4 |a T174.7 
072 7 |a TDPB  |2 bicssc 
072 7 |a TEC027000  |2 bisacsh 
082 0 4 |a 620.5  |2 23 
100 1 |a Samukawa, Seiji.  |e author. 
245 1 0 |a Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System  |h [electronic resource] /  |c by Seiji Samukawa. 
264 1 |a Tokyo :  |b Springer Japan :  |b Imprint: Springer,  |c 2014. 
300 |a VIII, 40 p. 35 illus., 30 illus. in color.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
490 1 |a SpringerBriefs in Applied Sciences and Technology,  |x 2191-530X 
505 0 |a Introduction -- On-wafer UV sensor and prediction of UV irradiation damage -- Prediction of Abnormal Etching Profiles in High-aspect-ratio Via/Hole Etching Using On-wafer Monitoring System -- Feature Profile Evolution in Plasma Processing Using Wireless On-wafer Monitoring System. 
520 |a This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described. 
650 0 |a Engineering. 
650 0 |a Plasma (Ionized gases). 
650 0 |a Nanoscale science. 
650 0 |a Nanoscience. 
650 0 |a Nanostructures. 
650 0 |a Semiconductors. 
650 0 |a Nanotechnology. 
650 1 4 |a Engineering. 
650 2 4 |a Nanotechnology and Microengineering. 
650 2 4 |a Nanoscale Science and Technology. 
650 2 4 |a Nanotechnology. 
650 2 4 |a Plasma Physics. 
650 2 4 |a Semiconductors. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9784431547945 
830 0 |a SpringerBriefs in Applied Sciences and Technology,  |x 2191-530X 
856 4 0 |u http://dx.doi.org/10.1007/978-4-431-54795-2  |z Full Text via HEAL-Link 
912 |a ZDB-2-ENG 
950 |a Engineering (Springer-11647)