Defects and Impurities in Silicon Materials An Introduction to Atomic-Level Silicon Engineering /

• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Άλλοι συγγραφείς: Yoshida, Yutaka (Επιμελητής έκδοσης), Langouche, Guido (Επιμελητής έκδοσης)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Tokyo : Springer Japan : Imprint: Springer, 2015.
• Σειρά: Lecture Notes in Physics, 916
• Θέματα: Physics.; Solid state physics.; Nanoscale science.; Nanoscience.; Nanostructures.; Semiconductors.; Nanotechnology.; Engineering > Materials.; Materials Engineering.; Nanotechnology and Microengineering.; Solid State Physics.; Nanoscale Science and Technology.

This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental...

Πίνακας περιεχομένων:

• Diffusion and point defects in silicon materials
• Density functional modeling of defects and impurities in silicon materials
• Electrical and optical defect evaluation techniques for electronic and solar grade silicon
• Intrinsic point defect engineering during single crystal Si and Ge growth from a melt
• Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells
• Oxygen precipitation in silicon
• Defect characterization by electron beam induced current and cathode luminescence methods
• Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators
• Defect Engineering in silicon materials.