Novel Three-state Quantum Dot Gate Field Effect Transistor Fabrication, Modeling and Applications /

The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας: Karmakar, Supriya (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: New Delhi : Springer India : Imprint: Springer, 2014.
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
LEADER 02585nam a22004455i 4500
001 978-81-322-1635-3
003 DE-He213
005 20151204164638.0
007 cr nn 008mamaa
008 131120s2014 ii | s |||| 0|eng d
020 |a 9788132216353  |9 978-81-322-1635-3 
024 7 |a 10.1007/978-81-322-1635-3  |2 doi 
040 |d GrThAP 
050 4 |a T174.7 
072 7 |a TDPB  |2 bicssc 
072 7 |a TEC027000  |2 bisacsh 
082 0 4 |a 620.5  |2 23 
100 1 |a Karmakar, Supriya.  |e author. 
245 1 0 |a Novel Three-state Quantum Dot Gate Field Effect Transistor  |h [electronic resource] :  |b Fabrication, Modeling and Applications /  |c by Supriya Karmakar. 
264 1 |a New Delhi :  |b Springer India :  |b Imprint: Springer,  |c 2014. 
300 |a XIV, 134 p. 121 illus., 49 illus. in color.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
505 0 |a Introduction: Multi State Devices and Logic -- Quantum Dot Gate Field Effect Transistor Device Structures -- Quantum Dot Gate Field Effect Transistors Fabrication and Characterization -- Quantum DOT Gate Field Effect Transistors Theory and Device Modeling -- Quantum Dot Gate NMOS Inverter -- Quantum Dot Gate Field Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter -- Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) Using Quantum DOT Gate Field Effect Transistor (QDGFET) -- Performance in SUB-25nm Range -- Conclusions. 
520 |a The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated. 
650 0 |a Engineering. 
650 0 |a Electronic circuits. 
650 0 |a Nanotechnology. 
650 1 4 |a Engineering. 
650 2 4 |a Nanotechnology and Microengineering. 
650 2 4 |a Circuits and Systems. 
650 2 4 |a Electronic Circuits and Devices. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9788132216346 
856 4 0 |u http://dx.doi.org/10.1007/978-81-322-1635-3  |z Full Text via HEAL-Link 
912 |a ZDB-2-ENG 
950 |a Engineering (Springer-11647)