Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies

Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of convention...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας: Fulde, Michael (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Dordrecht : Springer Netherlands, 2010.
Σειρά:Springer Series in Advanced Microelectronics, 28
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
LEADER 03493nam a22004695i 4500
001 978-90-481-3280-5
003 DE-He213
005 20151103123221.0
007 cr nn 008mamaa
008 100301s2010 ne | s |||| 0|eng d
020 |a 9789048132805  |9 978-90-481-3280-5 
024 7 |a 10.1007/978-90-481-3280-5  |2 doi 
040 |d GrThAP 
050 4 |a TK7888.4 
072 7 |a TJFC  |2 bicssc 
072 7 |a TEC008010  |2 bisacsh 
082 0 4 |a 621.3815  |2 23 
100 1 |a Fulde, Michael.  |e author. 
245 1 0 |a Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies  |h [electronic resource] /  |c by Michael Fulde. 
264 1 |a Dordrecht :  |b Springer Netherlands,  |c 2010. 
300 |a X, 127 p.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
490 1 |a Springer Series in Advanced Microelectronics,  |x 1437-0387 ;  |v 28 
505 0 |a Analog Properties of Multi-Gate MOSFETs -- High-k Related Design Issues -- Multi-Gate Related Design Aspects -- Multi-Gate Tunneling FETs -- Conclusions and Outlook. 
520 |a Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies. Closing the gap from technology to design a detailed insight into circuit performance trade-offs related to multi-gate and high-k device specifics is provided. The new effect of transient threshold voltage variations is described with an equivalent model that allows a systematic assessment of the consequences on circuit level and the development of countermeasures to compensate for performance degradation in comparators and A/D converters. Key analog, mixed-signal and RF building blocks are realized in high-k multi-gate technology and benchmarked against planar bulk. Performance and area benefits, enabled by advantageous multi-gate device properties are analytically and experimentally quantified for reference circuits, operational amplifiers and D/A converters. This is based on first time silicon investigations of complex mixed-signal building blocks as D/A converter and PLL with multi-gate devices. As another first, the integration of tunnel transistors in a multi-gate process is described, enabling devices with promising scaling and analog properties. Based on these devices a novel reference circuit is proposed which features low power consumption. 
650 0 |a Engineering. 
650 0 |a Electronic circuits. 
650 0 |a Optical materials. 
650 0 |a Electronic materials. 
650 1 4 |a Engineering. 
650 2 4 |a Circuits and Systems. 
650 2 4 |a Optical and Electronic Materials. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9789048132799 
830 0 |a Springer Series in Advanced Microelectronics,  |x 1437-0387 ;  |v 28 
856 4 0 |u http://dx.doi.org/10.1007/978-90-481-3280-5  |z Full Text via HEAL-Link 
912 |a ZDB-2-ENG 
950 |a Engineering (Springer-11647)