Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies
Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of convention...
Κύριος συγγραφέας: | |
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Συγγραφή απο Οργανισμό/Αρχή: | |
Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
Γλώσσα: | English |
Έκδοση: |
Dordrecht :
Springer Netherlands,
2010.
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Σειρά: | Springer Series in Advanced Microelectronics,
28 |
Θέματα: | |
Διαθέσιμο Online: | Full Text via HEAL-Link |
Πίνακας περιεχομένων:
- Analog Properties of Multi-Gate MOSFETs
- High-k Related Design Issues
- Multi-Gate Related Design Aspects
- Multi-Gate Tunneling FETs
- Conclusions and Outlook.