Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies
Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of convention...
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| Format: | Electronic eBook |
| Language: | English |
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Dordrecht :
Springer Netherlands,
2010.
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| Series: | Springer Series in Advanced Microelectronics,
28 |
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| Online Access: | Full Text via HEAL-Link |
Table of Contents:
- Analog Properties of Multi-Gate MOSFETs
- High-k Related Design Issues
- Multi-Gate Related Design Aspects
- Multi-Gate Tunneling FETs
- Conclusions and Outlook.