Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies

Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of convention...

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Bibliographic Details
Main Author: Fulde, Michael (Author)
Corporate Author: SpringerLink (Online service)
Format: Electronic eBook
Language:English
Published: Dordrecht : Springer Netherlands, 2010.
Series:Springer Series in Advanced Microelectronics, 28
Subjects:
Online Access:Full Text via HEAL-Link
Table of Contents:
  • Analog Properties of Multi-Gate MOSFETs
  • High-k Related Design Issues
  • Multi-Gate Related Design Aspects
  • Multi-Gate Tunneling FETs
  • Conclusions and Outlook.