Spintronics From Materials to Devices /

• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Άλλοι συγγραφείς: Felser, Claudia (Επιμελητής έκδοσης), Fecher, Gerhard H. (Επιμελητής έκδοσης)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Dordrecht : Springer Netherlands : Imprint: Springer, 2013.
• Θέματα: Materials science.; Physical chemistry.; Optical materials.; Electronic materials.; Materials > Surfaces.; Thin films.; Materials Science.; Optical and Electronic Materials.; Physical Chemistry.; Materials Science, general.; Surfaces and Interfaces, Thin Films.

Spintronics is an emerging technology exploiting the spin degree of freedom and has proved to be very promising for new types of fast electronic devices. Amongst the anticipated advantages of spintronics technologies, researchers have identified the non-volatile storage of data with high density and...

Πίνακας περιεχομένων:

• Heusler compounds at a glance
• New Heusler compounds and their properties
• Crystal structure of Heusler compounds
• Substitution effects in double Perovskites: How the crystal structure influences the electronic properties
• Half-metallic ferromagnets
• Correlation and chemical disorder in Heusler compounds: a spectroscopical study
• Theory of the half-metallic Heusler compounds
• Electronic structure of complex oxides
• Local structure of highly spin polarized Heusler compounds revealed by nuclear magnetic resonance spectroscopy
• New materials with high spin polarization investigated by X-ray magnetic circular dichroism
• Hard X-ray photoelectron spectroscopy of new materials for spintronics
• Characterization of the surface electronic properties of Co2Cr1−xFexAl
• Magneto-optical investigations and ion beam-induced modification of Heusler compounds
• Co2Fe(Al1−xSix) Heusler alloys and their applications to spintronics
• Transport properties of Co2(Mn,Fe)Si thin films
• Preparation and investigation of interfaces of Co2Cr1−xFexAl thin films
• Tunnel magnetoresistance effect in tunnel junctions with Co2MnSi Heusler alloy electrode and MgO barrier.