High Mobility and Quantum Well Transistors Design and TCAD Simulation /

• Κύριοι συγγραφείς: Hellings, Geert (Συγγραφέας), De Meyer, Kristin (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Dordrecht : Springer Netherlands : Imprint: Springer, 2013.
• Σειρά: Springer Series in Advanced Microelectronics, 42
• Θέματα: Physics.; Semiconductors.; Electronic circuits.; Nanotechnology.; Optical materials.; Electronic materials.; Electronic Circuits and Devices.; Circuits and Systems.; Optical and Electronic Materials.; Nanotechnology and Microengineering.

For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to...

Πίνακας περιεχομένων:

• List of Abbreviations and Symbols
• 1 Introduction
• 2 S/D Junctions in Ge: experimental
• 3 TCAD Simulation and Modeling of Ion Implants in Germanium
• 4 Electrical TCAD Simulations and Modeling in Germanium
• 5 Investigation of Quantum Well Transistors for Scaled Technologies
• 6 Implant-Free Quantum Well FETs: Experimental investigation
• 7 Conclusions Future Work and Outlook
• Bibliography
• List of Publications.