Poly-SiGe for MEMS-above-CMOS Sensors

• Κύριοι συγγραφείς: Gonzalez Ruiz, Pilar (Συγγραφέας), De Meyer, Kristin (Συγγραφέας), Witvrouw, Ann (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Dordrecht : Springer Netherlands : Imprint: Springer, 2014.
• Σειρά: Springer Series in Advanced Microelectronics, 44
• Θέματα: Physics.; Electronic circuits.; Nanotechnology.; Optical materials.; Electronic materials.; Materials science.; Electronic Circuits and Devices.; Circuits and Systems.; Optical and Electronic Materials.; Nanotechnology and Microengineering.; Characterization and Evaluation of Materials.

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead...

Πίνακας περιεχομένων:

• Acknowledgements
• Abstract
• Symbols and Abbreviations
• Introduction
• Poly-SiGe As Piezoresistive Material
• Design of a Poly-SiGe Piezoresistive Pressure Sensor
• The Pressure Sensor Fabrication Process
• Sealing of Surface Micromachined Poly-SiGe Cavities
• Characterization of Poly-SiGe pressure sensors
• CMOS Integrated Poly-SiGe Piezoresistive Pressure Sensor
• Conclusions And Future Work
• Appendix A
• Appendix B
• Appendix C
• Appendix D.