3D TCAD Simulation for CMOS Nanoeletronic Devices

• Κύριοι συγγραφείς: Wu, Yung-Chun (Συγγραφέας, http://id.loc.gov/vocabulary/relators/aut), Jhan, Yi-Ruei (http://id.loc.gov/vocabulary/relators/aut)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Singapore : Springer Singapore : Imprint: Springer, 2018.
• Έκδοση: 1st ed. 2018.
• Θέματα: Electronics.; Microelectronics.; Semiconductors.; Nanotechnology.; Industrial engineering.; Production engineering.; Electronics and Microelectronics, Instrumentation.; Nanotechnology and Microengineering.; Industrial and Production Engineering.

This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal-oxide-semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the buil...

Πίνακας περιεχομένων:

• Introduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools
• Simulation analysis of 2D MOSFET
• Simulation analysis of 3D FinFET with LG = 15 nm
• Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm
• Simulation analysis of GAA NWFET
• Simulation analysis of Junctionless FET with LG = 10 nm
• Simulation analysis of Tunnel FET
• Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm.