III-Nitride Based Light Emitting Diodes and Applications

The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Άλλοι συγγραφείς: Seong, Tae-Yeon (Επιμελητής έκδοσης), Han, Jung (Επιμελητής έκδοσης), Amano, Hiroshi (Επιμελητής έκδοσης), Morkoç, Hadis (Επιμελητής έκδοσης)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Singapore : Springer Singapore : Imprint: Springer, 2017.
Έκδοση:2nd ed. 2017.
Σειρά:Topics in Applied Physics, 133
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
Πίνακας περιεχομένων:
  • Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides
  • Ultra-Efficient Solid-State Lighting
  • LEDs Based on Heteroepitaxial GaN on Si Substrates
  • Epitaxial Growth of GaN on Patterned Sapphire Substrates
  • Growth and optical properties of GaN-based non- and semipolar LEDs
  • Internal Quantum Efficiency in Light Emitting Diodes
  • Internal Quantum Efficiency; Jong-In Shim
  • III-Nitride Tunnel Junctions and their Applications
  • Green, Yellow and Red LEDs
  • AlGaN based deep-ultraviolet light-emitting diodes
  • Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs
  • Light Extraction of High Efficient Light-Emitting Diodes
  • Electrical properties, reliability issues, and ESD robustness of InGaN-based LEDs
  • Phosphors and white LED packaging
  • High voltage LEDs
  • Emerging System Level Applications for LED Technology. .