III-Nitride Based Light Emitting Diodes and Applications

• Corporate Author: SpringerLink (Online service)
• Other Authors: Seong, Tae-Yeon (Editor), Han, Jung (Editor), Amano, Hiroshi (Editor), Morkoç, Hadis (Editor)
• Format: Electronic eBook
• Language: English
• Published: Singapore : Springer Singapore : Imprint: Springer, 2017.
• Edition: 2nd ed. 2017.
• Series: Topics in Applied Physics, 133
• Subjects: Physics.; Semiconductors.; Microwaves.; Optical engineering.; Applied and Technical Physics.; Microwaves, RF and Optical Engineering.

The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress...

Table of Contents:

• Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides
• Ultra-Efficient Solid-State Lighting
• LEDs Based on Heteroepitaxial GaN on Si Substrates
• Epitaxial Growth of GaN on Patterned Sapphire Substrates
• Growth and optical properties of GaN-based non- and semipolar LEDs
• Internal Quantum Efficiency in Light Emitting Diodes
• Internal Quantum Efficiency; Jong-In Shim
• III-Nitride Tunnel Junctions and their Applications
• Green, Yellow and Red LEDs
• AlGaN based deep-ultraviolet light-emitting diodes
• Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs
• Light Extraction of High Efficient Light-Emitting Diodes
• Electrical properties, reliability issues, and ESD robustness of InGaN-based LEDs
• Phosphors and white LED packaging
• High voltage LEDs
• Emerging System Level Applications for LED Technology. .