Impact of Ion Implantation on Quantum Dot Heterostructures and Devices

This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς: Mandal, Arjun (Συγγραφέας), Chakrabarti, Subhananda (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Singapore : Springer Singapore : Imprint: Springer, 2017.
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
Πίνακας περιεχομένων:
  • Preface
  • Acknowledgement
  • Contents
  • List of Figures
  • List of Tables
  • Abbreviations
  • Chapter 1: Introduction to Quantum Dots
  • Chapter 2: Low energy ion implantation over single layer InAs/GaAs quantum dots
  • Chapter 3: Optimizations for quaternary alloy (InAlGaAs) capped InAs/GaAs multilayer quantum dots
  • Chapter 4: Effects of low energy light ion (H−) implantations on quaternary-alloy-capped InAs/GaAs quantum dot infrared photodetectors
  • Chapter 5: Effects of low energy light ion (H−) implantation on quaternary-alloy-capped InGaAs/GaAs quantum dot infrared photodetectors.