Impact of Ion Implantation on Quantum Dot Heterostructures and Devices
This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their...
Κύριοι συγγραφείς: | , |
---|---|
Συγγραφή απο Οργανισμό/Αρχή: | |
Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
Γλώσσα: | English |
Έκδοση: |
Singapore :
Springer Singapore : Imprint: Springer,
2017.
|
Θέματα: | |
Διαθέσιμο Online: | Full Text via HEAL-Link |
Πίνακας περιεχομένων:
- Preface
- Acknowledgement
- Contents
- List of Figures
- List of Tables
- Abbreviations
- Chapter 1: Introduction to Quantum Dots
- Chapter 2: Low energy ion implantation over single layer InAs/GaAs quantum dots
- Chapter 3: Optimizations for quaternary alloy (InAlGaAs) capped InAs/GaAs multilayer quantum dots
- Chapter 4: Effects of low energy light ion (H−) implantations on quaternary-alloy-capped InAs/GaAs quantum dot infrared photodetectors
- Chapter 5: Effects of low energy light ion (H−) implantation on quaternary-alloy-capped InGaAs/GaAs quantum dot infrared photodetectors.