Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications

This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better mat...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας: Zhu, Min (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Singapore : Springer Singapore : Imprint: Springer, 2017.
Σειρά:Springer Theses, Recognizing Outstanding Ph.D. Research,
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
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100 1 |a Zhu, Min.  |e author. 
245 1 0 |a Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications  |h [electronic resource] /  |c by Min Zhu. 
264 1 |a Singapore :  |b Springer Singapore :  |b Imprint: Springer,  |c 2017. 
300 |a XVI, 124 p. 83 illus.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
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490 1 |a Springer Theses, Recognizing Outstanding Ph.D. Research,  |x 2190-5053 
505 0 |a Acknowledge -- Abstract -- Introduction -- Component Optimization of Sb-Te in Ti-Sb-Te Phase Change Materials -- Component Optimization of Ti in Ti-Sb2Te3 Phase Change Materials -- Optimization Component Ti0.43Sb2Te3 -- Influence of Temperature on Performance of Ti0.43Sb2Te3 Based Device -- Phase Change Mechanism of Ti0.43Sb2Te3 Alloy -- Ti0.43Sb2Te3 Based Phase Change Memory Chip -- Summary -- References -- Published Papers and Patents -- Bibliography. 
520 |a This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications. 
650 0 |a Physics. 
650 0 |a Phase transitions (Statistical physics). 
650 0 |a Semiconductors. 
650 0 |a Electronic circuits. 
650 0 |a Electronics. 
650 0 |a Microelectronics. 
650 1 4 |a Physics. 
650 2 4 |a Semiconductors. 
650 2 4 |a Electronic Circuits and Devices. 
650 2 4 |a Electronics and Microelectronics, Instrumentation. 
650 2 4 |a Phase Transitions and Multiphase Systems. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9789811043819 
830 0 |a Springer Theses, Recognizing Outstanding Ph.D. Research,  |x 2190-5053 
856 4 0 |u http://dx.doi.org/10.1007/978-981-10-4382-6  |z Full Text via HEAL-Link 
912 |a ZDB-2-PHA 
950 |a Physics and Astronomy (Springer-11651)