Research on the Radiation Effects and Compact Model of SiGe HBT

• Κύριος συγγραφέας: Sun, Yabin (Συγγραφέας, http://id.loc.gov/vocabulary/relators/aut)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Singapore : Springer Singapore : Imprint: Springer, 2018.
• Έκδοση: 1st ed. 2018.
• Σειρά: Springer Theses, Recognizing Outstanding Ph.D. Research,
• Θέματα: Electronics.; Microelectronics.; Semiconductors.; Optical materials.; Electronic materials.; Electronic circuits.; Solid state physics.; Electronics and Microelectronics, Instrumentation.; Optical and Electronic Materials.; Electronic Circuits and Devices.; Solid State Physics.
• Φυσική περιγραφή: XXIV, 168 p. 171 illus. online resource.
• ISBN: 9789811046124
• ISSN: 2190-5053
• DOI: 10.1007/978-981-10-4612-4

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.