Research on the Radiation Effects and Compact Model of SiGe HBT

• Κύριος συγγραφέας: Sun, Yabin (Συγγραφέας, http://id.loc.gov/vocabulary/relators/aut)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Singapore : Springer Singapore : Imprint: Springer, 2018.
• Έκδοση: 1st ed. 2018.
• Σειρά: Springer Theses, Recognizing Outstanding Ph.D. Research,
• Θέματα: Electronics.; Microelectronics.; Semiconductors.; Optical materials.; Electronic materials.; Electronic circuits.; Solid state physics.; Electronics and Microelectronics, Instrumentation.; Optical and Electronic Materials.; Electronic Circuits and Devices.; Solid State Physics.

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique...

Πίνακας περιεχομένων:

• Introduction
• Ionization damage in SiGe HBT
• Displacement damage with swift heavy ions in SiGe HBT
• Single-event transient induced by pulse laser microbeam in SiGe HBT
• Small-signal equivalent circuit of SiGe HBT based on the distributed effects
• Parameter extraction of SiGe HBT models
• Conclusion.