Research on the Radiation Effects and Compact Model of SiGe HBT
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique...
Κύριος συγγραφέας: | |
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Συγγραφή απο Οργανισμό/Αρχή: | |
Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
Γλώσσα: | English |
Έκδοση: |
Singapore :
Springer Singapore : Imprint: Springer,
2018.
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Έκδοση: | 1st ed. 2018. |
Σειρά: | Springer Theses, Recognizing Outstanding Ph.D. Research,
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Θέματα: | |
Διαθέσιμο Online: | Full Text via HEAL-Link |
Πίνακας περιεχομένων:
- Introduction
- Ionization damage in SiGe HBT
- Displacement damage with swift heavy ions in SiGe HBT
- Single-event transient induced by pulse laser microbeam in SiGe HBT
- Small-signal equivalent circuit of SiGe HBT based on the distributed effects
- Parameter extraction of SiGe HBT models
- Conclusion.