Research on the Radiation Effects and Compact Model of SiGe HBT

• Main Author: Sun, Yabin (Author, http://id.loc.gov/vocabulary/relators/aut)
• Corporate Author: SpringerLink (Online service)
• Format: Electronic eBook
• Language: English
• Published: Singapore : Springer Singapore : Imprint: Springer, 2018.
• Edition: 1st ed. 2018.
• Series: Springer Theses, Recognizing Outstanding Ph.D. Research,
• Subjects: Electronics.; Microelectronics.; Semiconductors.; Optical materials.; Electronic materials.; Electronic circuits.; Solid state physics.; Electronics and Microelectronics, Instrumentation.; Optical and Electronic Materials.; Electronic Circuits and Devices.; Solid State Physics.

This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique...

Table of Contents:

• Introduction
• Ionization damage in SiGe HBT
• Displacement damage with swift heavy ions in SiGe HBT
• Single-event transient induced by pulse laser microbeam in SiGe HBT
• Small-signal equivalent circuit of SiGe HBT based on the distributed effects
• Parameter extraction of SiGe HBT models
• Conclusion.