Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

• Κύριος συγγραφέας: Cheng, Jie (Συγγραφέας, http://id.loc.gov/vocabulary/relators/aut)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Singapore : Springer Singapore : Imprint: Springer, 2018.
• Έκδοση: 1st ed. 2018.
• Σειρά: Springer Theses, Recognizing Outstanding Ph.D. Research,
• Θέματα: Manufactures.; Tribology.; Corrosion and anti-corrosives.; Coatings.; Electronics.; Microelectronics.; Manufacturing, Machines, Tools, Processes.; Tribology, Corrosion and Coatings.; Electronics and Microelectronics, Instrumentation.
• Φυσική περιγραφή: XVIII, 137 p. 103 illus. online resource.
• ISBN: 9789811061653
• ISSN: 2190-5053
• DOI: 10.1007/978-981-10-6165-3

This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.