Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor

• Κύριοι συγγραφείς: Amiri, Iraj Sadegh (Συγγραφέας, http://id.loc.gov/vocabulary/relators/aut), Ghadiry, Mahdiar (http://id.loc.gov/vocabulary/relators/aut)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Singapore : Springer Singapore : Imprint: Springer, 2018.
• Έκδοση: 1st ed. 2018.
• Σειρά: SpringerBriefs in Applied Sciences and Technology,
• Θέματα: Nanotechnology.; Electronic circuits.; Nanotechnology and Microengineering.; Electronic Circuits and Devices.

This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and...

Πίνακας περιεχομένων:

• Introduction on Scaling Issues of Conventional Semiconductors
• Basic Concept of Field Effect Transistors
• Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors
• Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor
• Conclusion and Futureworks on High Voltage Application of Graphene.