Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor

This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς: Amiri, Iraj Sadegh (Συγγραφέας, http://id.loc.gov/vocabulary/relators/aut), Ghadiry, Mahdiar (http://id.loc.gov/vocabulary/relators/aut)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Singapore : Springer Singapore : Imprint: Springer, 2018.
Έκδοση:1st ed. 2018.
Σειρά:SpringerBriefs in Applied Sciences and Technology,
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
Πίνακας περιεχομένων:
  • Introduction on Scaling Issues of Conventional Semiconductors
  • Basic Concept of Field Effect Transistors
  • Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors
  • Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor
  • Conclusion and Futureworks on High Voltage Application of Graphene.