Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors

• Main Author: Fu, Mengqi (Author, http://id.loc.gov/vocabulary/relators/aut)
• Corporate Author: SpringerLink (Online service)
• Format: Electronic eBook
• Language: English
• Published: Singapore : Springer Singapore : Imprint: Springer, 2018.
• Edition: 1st ed. 2018.
• Series: Springer Theses, Recognizing Outstanding Ph.D. Research,
• Subjects: Nanoscale science.; Nanoscience.; Nanostructures.; Nanotechnology.; Semiconductors.; Materials science.; Electronic circuits.; Optical materials.; Electronic materials.; Nanoscale Science and Technology.; Nanotechnology and Microengineering.; Characterization and Evaluation of Materials.; Electronic Circuits and Devices.; Optical and Electronic Materials.

This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in...

Table of Contents:

• Introduction
• Preparation, characterization and parameter extraction of InAs nanowire-based devices
• Size effect on the electrical properties of InAs nanowires
• Crystal phase- and orientation-dependent electrical properties of InAs nanowires
• Influence of growth methods on the electrical properties of InAs nanowires
• Summary.