Wang, G., & Wang, G. (2019). Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond (1st ed. 2019.). Springer Singapore : Imprint: Springer. https://doi.org/10.1007/978-981-15-0046-6
Chicago Style (17th ed.) CitationWang, Guilei, and Guilei Wang. Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 Nm CMOS Technology Node and Beyond. 1st ed. 2019. Singapore: Springer Singapore : Imprint: Springer, 2019. https://doi.org/10.1007/978-981-15-0046-6.
MLA (8th ed.) CitationWang, Guilei, and Guilei Wang. Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 Nm CMOS Technology Node and Beyond. 1st ed. 2019. Springer Singapore : Imprint: Springer, 2019. https://doi.org/10.1007/978-981-15-0046-6.