Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

• Main Author: Wang, Guilei (Author, http://id.loc.gov/vocabulary/relators/aut)
• Corporate Author: SpringerLink (Online service)
• Format: Electronic eBook
• Language: English
• Published: Singapore : Springer Singapore : Imprint: Springer, 2019.
• Edition: 1st ed. 2019.
• Series: Springer Theses, Recognizing Outstanding Ph.D. Research,
• Subjects: Semiconductors.; Electronic circuits.; Nanotechnology.; Circuits and Systems.; Nanotechnology and Microengineering.

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of trans...

Table of Contents:

• Introduction
• Strain technology of Si-based materials
• SiGe Epitaxial Growth and material characterization
• SiGe Source and Drain Integration and transistor performance investigation
• Pattern Dependency behavior of SiGe Selective Epitaxy
• Summary and final words.