Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

• Κύριος συγγραφέας: Wang, Guilei (Συγγραφέας, http://id.loc.gov/vocabulary/relators/aut)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Singapore : Springer Singapore : Imprint: Springer, 2019.
• Έκδοση: 1st ed. 2019.
• Σειρά: Springer Theses, Recognizing Outstanding Ph.D. Research,
• Θέματα: Semiconductors.; Electronic circuits.; Nanotechnology.; Circuits and Systems.; Nanotechnology and Microengineering.

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of trans...

Πίνακας περιεχομένων:

• Introduction
• Strain technology of Si-based materials
• SiGe Epitaxial Growth and material characterization
• SiGe Source and Drain Integration and transistor performance investigation
• Pattern Dependency behavior of SiGe Selective Epitaxy
• Summary and final words.