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oapen-20.500.12657-224372024-03-22T19:23:01Z Strain-Engineered MOSFETs Maiti, C.K. Maiti, T.K. Engineering Electrical Engineering thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization. 2020-03-17 03:00:34 2020-04-01T06:50:48Z 2020-04-01T06:50:48Z 2012-11-28 book 1007743 9781466503472 9781138075603 9781466500556 9781315216577 http://library.oapen.org/handle/20.500.12657/22437 eng application/pdf n/a 1007743.pdf CRC Press 10.1201/9781315216577 102701 10.1201/9781315216577 63ecf019-b273-4b96-9b26-19d50005fba4 b818ba9d-2dd9-4fd7-a364-7f305aef7ee9 9781466503472 9781138075603 9781466500556 9781315216577 Knowledge Unlatched (KU) 102701 KU Select 2018: STEM Backlist Books Knowledge Unlatched open access
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This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization.
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