52151.pdf

Oxide-based electronics have been well established as an alternative to silicon technology; however, typical processing requires complex, high-vacuum equipment, which is a major drawback, particularly when targeting low-cost applications. The possibility to deposit the materials by low-cost techniqu...

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Έκδοση: InTechOpen 2021
id oapen-20.500.12657-49224
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spelling oapen-20.500.12657-492242021-11-23T13:56:38Z Chapter X‐Ray Spectroscopy on Biological Systems Czapla-Masztafiak, Joanna Kwiatek, Wojciech M. Sá, Jacinto Szlachetko, Jakub solution processing, combustion synthesis, environmentally friendly, metal oxide materials, thin-film transistors, semiconductor oxides, dielectric oxides bic Book Industry Communication::T Technology, engineering, agriculture::TD Industrial chemistry & manufacturing technologies::TDC Industrial chemistry::TDCB Chemical engineering Oxide-based electronics have been well established as an alternative to silicon technology; however, typical processing requires complex, high-vacuum equipment, which is a major drawback, particularly when targeting low-cost applications. The possibility to deposit the materials by low-cost techniques such as inkjet printing has drawn tremendous interest in solution processible materials for electronic applications; however, high processing temperatures still required. To overcome this issue, solution combustion synthesis has been recently pursued. Taking advantage of the exothermic nature of the reaction as a source of energy for localized heating, the precursor solutions can be converted into oxides at lower process temperatures. Theoretically, this can be applied to any metal ions to produce the desired oxide, opening unlimited possibilities to materials’ composition and combinations. Solution combustion synthesis has been applied for the production of semiconductor thin films based on ZnO, In2O3, SnO2 and combinations of these oxides, and also for high κ dielectrics (Al2O3). All of which are required for numerous electronic devices and applications such as fully oxide-based thin-film transistors (TFTs). The properties of produced thin films are highly dependent on the precursor solution characteristics; hence, the influence of several processing parameters; organic fuel, solvent and annealing temperature was studied. Although precursor solution degradation/oxide formation mechanisms are not yet fully understood, particularly for thin films, we demonstrate that high-performance devices are obtained with combustion solution-based metal oxide thin films. The results clearly show that solution combustion synthesis is becoming one of the most promising methods for low-temperature flexible electronics. 2021-06-02T10:09:52Z 2021-06-02T10:09:52Z 2017 chapter ONIX_20210602_10.5772/64953_338 https://library.oapen.org/handle/20.500.12657/49224 eng application/pdf n/a 52151.pdf InTechOpen 10.5772/64953 10.5772/64953 09f6769d-48ed-467d-b150-4cf2680656a1 FP7-PEOPLE-2011-COFUND 290605 open access
institution OAPEN
collection DSpace
language English
description Oxide-based electronics have been well established as an alternative to silicon technology; however, typical processing requires complex, high-vacuum equipment, which is a major drawback, particularly when targeting low-cost applications. The possibility to deposit the materials by low-cost techniques such as inkjet printing has drawn tremendous interest in solution processible materials for electronic applications; however, high processing temperatures still required. To overcome this issue, solution combustion synthesis has been recently pursued. Taking advantage of the exothermic nature of the reaction as a source of energy for localized heating, the precursor solutions can be converted into oxides at lower process temperatures. Theoretically, this can be applied to any metal ions to produce the desired oxide, opening unlimited possibilities to materials’ composition and combinations. Solution combustion synthesis has been applied for the production of semiconductor thin films based on ZnO, In2O3, SnO2 and combinations of these oxides, and also for high κ dielectrics (Al2O3). All of which are required for numerous electronic devices and applications such as fully oxide-based thin-film transistors (TFTs). The properties of produced thin films are highly dependent on the precursor solution characteristics; hence, the influence of several processing parameters; organic fuel, solvent and annealing temperature was studied. Although precursor solution degradation/oxide formation mechanisms are not yet fully understood, particularly for thin films, we demonstrate that high-performance devices are obtained with combustion solution-based metal oxide thin films. The results clearly show that solution combustion synthesis is becoming one of the most promising methods for low-temperature flexible electronics.
title 52151.pdf
spellingShingle 52151.pdf
title_short 52151.pdf
title_full 52151.pdf
title_fullStr 52151.pdf
title_full_unstemmed 52151.pdf
title_sort 52151.pdf
publisher InTechOpen
publishDate 2021
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