62028.pdf
This chapter deals with (i) the charge transport mechanisms in X- and gamma-ray detectors both Ohmic and Schottky types based on CdTe and its alloys with an almost intrinsic conductivity (the peculiarities of the formation of self-compensated complexes due to the doping of Cd(Zn)Te crystals with ele...
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InTechOpen
2021
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oapen-20.500.12657-492882021-11-23T13:58:28Z Chapter Mechanisms of Charge Transport and Photoelectric Conversion in CdTe-Based X- and Gamma-Ray Detectors Maslyanchuk, Olena Melnychuk, Stepan Gnatyuk, Volodymyr Aoki, Toru X- and gamma-ray detector, CdTe, CdZnTe, CdMnTe, self-compensation, Schottky diode, concentration of uncompensated impurities, detection and collection efficiency bic Book Industry Communication::T Technology, engineering, agriculture::TH Energy technology & engineering::THK Nuclear power & engineering This chapter deals with (i) the charge transport mechanisms in X- and gamma-ray detectors both Ohmic and Schottky types based on CdTe and its alloys with an almost intrinsic conductivity (the peculiarities of the formation of self-compensated complexes due to the doping of Cd(Zn)Te crystals with elements of III or V groups (In, Cl) are taken into account); (ii) the reasons of insufficient energy resolution in the X- and gamma-ray spectra taken with the detectors under study; (iii) the quantitative model which describes the spectral distribution of the detection efficiency of Cd(Zn)Te crystals with Schottky diodes; (iv) a correlation between the concentration of uncompensated impurities in the Cd(Zn)Te crystals and collection efficiency of photogenerated charge carriers in the detectors with a Schottky contact; (v) the possibility of applications of CdTe thin films with a Schottky contact as an alternative to the existing X-rays image detectors based on a-Se. 2021-06-02T10:11:27Z 2021-06-02T10:11:27Z 2018 chapter ONIX_20210602_10.5772/intechopen.78504_402 https://library.oapen.org/handle/20.500.12657/49288 eng application/pdf n/a 62028.pdf InTechOpen 10.5772/intechopen.78504 10.5772/intechopen.78504 09f6769d-48ed-467d-b150-4cf2680656a1 FP7-SEC-2007-1 218000 open access |
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OAPEN |
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English |
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This chapter deals with (i) the charge transport mechanisms in X- and gamma-ray detectors both Ohmic and Schottky types based on CdTe and its alloys with an almost intrinsic conductivity (the peculiarities of the formation of self-compensated complexes due to the doping of Cd(Zn)Te crystals with elements of III or V groups (In, Cl) are taken into account); (ii) the reasons of insufficient energy resolution in the X- and gamma-ray spectra taken with the detectors under study; (iii) the quantitative model which describes the spectral distribution of the detection efficiency of Cd(Zn)Te crystals with Schottky diodes; (iv) a correlation between the concentration of uncompensated impurities in the Cd(Zn)Te crystals and collection efficiency of photogenerated charge carriers in the detectors with a Schottky contact; (v) the possibility of applications of CdTe thin films with a Schottky contact as an alternative to the existing X-rays image detectors based on a-Se. |
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