High-k gate dielectrics for CMOS technology /

"A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Άλλοι συγγραφείς: He, Gang (Professor of physics), Sun, Zhaoqi (Professor of physics)
Μορφή: Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Weinheim : Wiley-VCH, 2012.
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
Περιγραφή
Περίληψη:"A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting devices, and an outlook towards future transistor stacking technology. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering."--
Φυσική περιγραφή:1 online resource (xxxi, 558 pages) : illustrations (some color)
Βιβλιογραφία:Includes bibliographical references and index.
ISBN:9783527646340
9783527646371
352764637X
9783527646364
3527646361
9783527646357
3527646353
3527646345
3527330321
9783527330324
9781280881435
1280881437
DOI:10.1002/9783527646340